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36. Scheme of N-implanted (Gaussian profile), n-type 4H-SiC MOS structure. The dashed vertical straight line indicates the position of the SiC/Si02 interface. (ii) Orientation-dependent effects Oxidized Si (OOOl)-surfaces of hexagonal SiC polytypes result in lower Dit values than C (OOO-l)-surfaces. 129"136 Conductance measurements reveal that a significant reduction of Djt can be achieved by nitridation compared to the standard oxidation in the lower part of the band gap as well as close to the conduction band edge (see Fig.

Detailed investigation of the homoepitaxial 6H-SiC growth by the gas source MBE is described in [53]. The advantage of the MBE method is the low growth temperature and possibility of growing different SiC polytypes, so realizing heterostructure consisting of layers of different polytypes with different band gaps, for instance such structures as 4H/3C/4HSiC(0001) and 6H/3C/6H-SiC(0001) [54]. Formation of certain polytype under MBE growth can be observed in situ employing RHEED investigations. The control of different polytype growth is realized by variation of growth temperature or providing Si- or C-rich growth conditions.

S. Tamura, T. Kimoto, H. Matsunami, M. Okada, S. Kanatawa, I. Kimura, "Nuclear Transmutation Doping of Phosphorus into 6H-SiC", Mater. Sci. Forum 338-342 (2000) 849-853. F. H. C. Carlsson, L. Storasta, B. Magnusson, J. P. Bergman, K. Skold, E. Janzen, "Neutron Irradiation of 4H SiC", Mater. Sci. Forum 353-356 (2001) 555-559. Le Si Dang, K. M. Lee, G. D. Watkins, W. J. Choyke, "Optical Detection of Magnetic Resonance for an Effective-Mass-like Acceptor in 6H-SiC", Phys. Rev. Lett. 45 (1980) 390-394.

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