By Yu. Yu. Hervieu, M. P. Ruzaikin (auth.), E. I. Givargizov, A. M. Mel’nikova (eds.)
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Finally, the fourth section examines the kinetics of lateral growth and the edge faceting of a GaAs layer growing over a metallic (tungsten, W) mask. We discuss the possible influence of the mask material on lateral growth owing to different adsorptive capacity of the insulator and metal and, as a result, the different fluxes of material along the mask surface to the lateral growth front. The experimental techniques and methods are described in the first section. 25 E. I. Givargizov et al. ), Growth of Crystals © Kluwer Academic/Plenum Publishers, New York 2002 26 I.
The sensitivity is higher than that of transmission x-ray topography by more than two orders of magnitude. CONCLUSION Reflection x-ray interferometry is performed for the first time on an epitaxial structure consisting of the three-layer system Si substrate-porous Si-epilayer. The porous layer plays the same role that the air gap plays in traditional interferometry. This was possible because the diffraction peak of porous Si is significantly shifted relative to the common peak of the layer and substrate.
V. IVONIN ET AL. " REFERENCES 1. L. Jastrzebski, "SOl by CVD: epitaxial lateral overgrowth (ELO) process - review," J. Cryst. Growth, 63, 493-526 (1983). 2. L. P. Porokhovnichenko, 1. V. Ivonin, and L. A. Borisenko, "Lateral growth of A3B5 compounds," Obz. Elektron. , Ser. 3, 1-36 (1991). 3. C. O. Bozler and G. D. Alley, "Fabrication and numerical simulation of the permeable base transistors," IEEE Trans. Electron. 6, 1127-1141 (1980). 4. N. Vodjdani, M. Erman, and J. B. Theeten, "Structural analysis and optical characterization oflow-loss GaAs waveguides fabricated by selective epitaxy," J.